parameter symbol value unit collector-base voltage v c b o 100 v collector-emitter voltage v c e o 100 v emitter-base voltage v e b o 5 v collector current i c 25 a base current i b 5 a total dissipation at p t o t 125 w max. operating junction temperature t j 150 o c storage temperature t s t g -55~150 o c tip35c / TIP36C description parameter symbol test conditions min. typ. max. unit collector cut-off current i c e o v c b =60v, i e =0 1.0 ma emitter cut-off current i e b o v e b =5v, i c =0 1.0 ma collector-emitter sustaining voltage v c e o i c =30ma, i b =0 100 v dc current gain h f e ( 1 ) v c e =4v, i c =1.5a 25 h f e ( 2 ) v c e =4v, i c =15a 10 60 collector-emitter saturation voltage v c e ( s a t ) i c =25a,i b =5a 4.0 v base-emitter voltage v b e v c e =4v,i c =15a 2.0 v transition frequency f t v c e =5v,i c =1a 3 mhz complementary silicon high power ttransistors product specification it is intented for use in power amplifier and switching applications. electrical characteristics absolute maximum ratings to-3pn ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
|
